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Elastic deformation blockade in a single-electron transistor
Phys. Rev. B 68, 121305(R) – Published 16 September, 2003
DOI: https://doi.org/10.1103/PhysRevB.68.121305
Abstract
A blockade phenomenon for electron transport in a freely suspended single-electron transistor (SET) is predicted. Voltages applied for its operation induce electromechanical forces acting on the SET, giving rise to structural deformation and collapse over a critical voltage. The electric characteristics become sensitive to charge fluctuations on the SET at the onset of the structural instability, leading to changes in the electrical characteristics that hinder electron transport through the SET around the zero-bias-voltage region.